Title:
A method and a device for controlling a plasma treatment system
Document Type and Number:
Japanese Patent JP6279535
Kind Code:
B2
Abstract:
A method and apparatus for compensating a bias voltage at the wafer by measuring RF voltage signals in RF driven plasma including at least an electrostatic, chuck (ESC), a capacitive divider, a signal processing and signal conditioning network is disclosed. The bias compensation device includes a capacitive divider to detect the RF voltage at the ESC, a signal conditioning network for the purpose of filtering specific RF signals of interests, and a signal processing unit for computing the DC wafer potential from the filtered RF signals.
Inventors:
Balcoa Junior John Sea.
Application Number:
JP2015234392A
Publication Date:
February 14, 2018
Filing Date:
December 01, 2015
Export Citation:
Assignee:
LAM RESEARCH CORPORATION
International Classes:
H05H1/46; C23C14/54; C23C16/505
Domestic Patent References:
| JP2003510833A | ||||
| JP2006156530A | ||||
| JP2007227562A | ||||
| JP2008041795A | ||||
| JP2007531999A | ||||
| JP2002510879A | ||||
| JP2005197503A | ||||
| JP10081968A | ||||
| JP2002527887A |
Foreign References:
| US20060256499 | ||||
| US5894400 | ||||
| WO2008036210A1 |
Attorney, Agent or Firm:
Meisei International Patent Office