Title:
Methods and equipment for plasma dicing of semiconductor wafers
Document Type and Number:
Japanese Patent JP6336658
Kind Code:
B2
Abstract:
The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
Inventors:
Westerman, Russell
Johnson, David
Johnson, Chris
Martinez, Linen
Pays-Volard, David
Hryvnia, Gordon
Johnson, David
Johnson, Chris
Martinez, Linen
Pays-Volard, David
Hryvnia, Gordon
Application Number:
JP2017104134A
Publication Date:
June 06, 2018
Filing Date:
May 26, 2017
Export Citation:
Assignee:
Plasma-Sam, LRC
International Classes:
H01L21/301; H01L21/3065; H01L21/683
Domestic Patent References:
| JP2009094436A | ||||
| JP2009123987A | ||||
| JP2007073589A | ||||
| JP2007019375A | ||||
| JP2003059998A | ||||
| JP2002246354A | ||||
| JP11307513A |
Foreign References:
| US20100216313 | ||||
| US20100048001 | ||||
| US20010032704 |
Attorney, Agent or Firm:
Asamura patent office
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