Title:
A method for film deposition of a metal membrane
Document Type and Number:
Japanese Patent JP5917351
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method of forming a metal film in which the metal film including less impurities can be formed with high throughput through CVD.SOLUTION: A metal film is formed through: a first process of arranging a substrate to be treated in a treating vessel and forming an initial metal film through CVD by supplying onto the substrate to be treated a film forming material comprising a metal-containing compound which has a ligand having a nitrogen-carbon bond in a molecular structure and has a structure where nitrogen in the ligand is coordinated with metal and a reducing gas comprising at least one kind selected out of ammonia, hydrazine, and derivatives thereof; a second process of subjecting the substrate to be treated to hydrogen treatment by supplying a hydrogen gas into the treating container; and a third process of forming a main metal film through CVD by supplying onto the initial metal film formed on the substrate to be treated a film forming material comprising the same metal-containing compound with the first process and a reducing gas composed of a hydrogen gas.
Inventors:
Hayato Hayashi
Application Number:
JP2012206920A
Publication Date:
May 11, 2016
Filing Date:
September 20, 2012
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
C23C16/18; H01L21/28; H01L21/285
Domestic Patent References:
| JP2013053337A | ||||
| JP2011066060A | ||||
| JP2012023152A | ||||
| JP2011529135A | ||||
| JP2006511716A | ||||
| JP2011063848A |
Foreign References:
| WO2011040385A1 | ||||
| WO2011027835A1 |
Attorney, Agent or Firm:
Hiroshi Takayama