Title:
DEPOSITION METHOD OF TUNGSTEN FILM
Document Type and Number:
Japanese Patent JP2017186595
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a deposition method of a tungsten film capable of depositing a tungsten film using tungsten chloride gas as a raw material gas while suppressing etching of a base film.SOLUTION: A deposition method of a tungsten film includes a step for subjecting a substrate to be processed on which a base film is formed to SiHgas processing, and a tungsten film depositing step for depositing a main tungsten film by supplying a chamber with tungsten chloride gas and a reducing gas sequentially after purging the chamber. The tungsten chloride processing may follow SiHgas processing. The reducing gas may be suppressed to be present when supplying the tungsten chloride gas in the tungsten film depositing step.SELECTED DRAWING: Figure 2
Inventors:
SUZUKI KENJI
HOTTA JUNJI
MARUYAMA TOMOHISA
NASU KATSUYUKI
MIYAHARA JUNYA
MAEKAWA KOJI
HOTTA JUNJI
MARUYAMA TOMOHISA
NASU KATSUYUKI
MIYAHARA JUNYA
MAEKAWA KOJI
Application Number:
JP2016075061A
Publication Date:
October 12, 2017
Filing Date:
April 04, 2016
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
C23C16/02; C23C16/14; H01L21/28; H01L21/285; H01L21/288
Domestic Patent References:
| JP2015221940A | 2015-12-10 | |||
| JP2004273764A | 2004-09-30 | |||
| JP2007027627A | 2007-02-01 | |||
| JPH02237116A | 1990-09-19 |
Foreign References:
| US20140120723A1 | 2014-05-01 | |||
| WO2015080058A1 | 2015-06-04 |
Attorney, Agent or Firm:
Hiroshi Takayama
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