Title:
同じマスクパターンの、バイアスが異なる複数のバージョンを有するフォトマスクレティクルを用いて半導体層を形成する方法
Document Type and Number:
Japanese Patent JP2008503092
Kind Code:
A
Abstract:
A method of forming a semiconductor layer of a semiconductor device including interposing a reticle between an energy source and a semiconductor wafer, the reticle including at least two duplicate mask patterns each having a different bias, and passing energy through an opening in a shutter and through one of the at least two duplicate mask patterns using the energy source to form an image on the semiconductor wafer. The one of the at least two duplicate mask patterns is chosen based on a required bias. The at least two duplicate mask patterns are disposed in a side by side relationship to one another and extend parallel or transverse to the shutter opening.
Inventors:
Rockwell, Barry Kay
Tracy, Jeffrey W
Vokun, Edward
Tracy, Jeffrey W
Vokun, Edward
Application Number:
JP2007516567A
Publication Date:
January 31, 2008
Filing Date:
June 09, 2005
Export Citation:
Assignee:
PHOTRONICS, INC.
International Classes:
H01L21/027; G01F9/00; G03C5/00; G03F1/08; G03F1/14; G03F7/20; G06F17/50
Domestic Patent References:
| JP2004071978A | 2004-03-04 | |||
| JP2001516141A | 2001-09-25 |
Attorney, Agent or Firm:
Michiharu Soga
Hidetoshi Furukawa
Suzuki Kenchi
Kajinami order
Hidetoshi Furukawa
Suzuki Kenchi
Kajinami order