Title:
最小間隔のMRAM構造を作成する改善された方法
Document Type and Number:
Japanese Patent JP4515031
Kind Code:
B2
Abstract:
A method of forming minimally spaced MRAM structures is disclosed. A photolithography technique is employed to define masking patterns, on the sidewalls of which spacers are subsequently formed to reduce the distance between any of the two adjacent masking patterns. A filler material is next used to fill in the space around the masking patterns and to form filler plugs. The masking patterns and the spacers are removed using the filler plugs as a hard mask. Digit and word lines of MRAM structures are subsequently formed.
Inventors:
Di. Mark Darkan
Gourtage Sandu
Trang T. Doane
Lee Roger
Dennis Keller
Ren Earl
Gourtage Sandu
Trang T. Doane
Lee Roger
Dennis Keller
Ren Earl
Application Number:
JP2002586388A
Publication Date:
July 28, 2010
Filing Date:
April 26, 2002
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/8246; H01L27/105; H01B13/00; H01G7/06; H01L21/00; H01L27/22; H01L43/08
Domestic Patent References:
| JP10150045A | ||||
| JP11224483A | ||||
| JP10509285A |
Foreign References:
| WO2000038191A1 |
Attorney, Agent or Firm:
Yoshikazu Tani
Kazuo Abe
Kazuo Abe