Title:
光の波長に応じてフォトダイオードの深さが異なるCMOSイメージセンサの製造方法及びそのフォトダイオード形成方法。
Document Type and Number:
Japanese Patent JP4130891
Kind Code:
B2
Abstract:
An image sensor capable of preventing the cross-talk phenomenon due to a deep penetration depth and a low absorption coefficient of red light in a photodiode region and a method for fabricating the same, wherein the photodiode for collecting incident light has different depths in accordance with the wavelength of the incident light. The photodiode for receiving red light, which has the longest wavelength, has the deepest depth, the photodiode for receiving blue light has the least depth, and the photodiode for receiving green light, which has a wavelength between the red light and the blue light has an intermediate depth.
Inventors:
Lee Gen Ho
Application Number:
JP2002381959A
Publication Date:
August 06, 2008
Filing Date:
December 27, 2002
Export Citation:
Assignee:
MAGNACHIP SEMICONDUCTOR LTD
International Classes:
H01L27/146; H01L21/265; H01L27/14
Domestic Patent References:
| JP61183958A | ||||
| JP2000228513A | ||||
| JP2001015727A | ||||
| JP5267638A | ||||
| JP61166127A |
Attorney, Agent or Firm:
Kyosei International Patent Office
Hiroji Nakagawa
Hiroji Nakagawa