A method for producing an oxide for a semiconductor layer of a thin film transistor and a method for improving the characteristics of the thin film transistor.

Japanese Patent JP6294428

B2

The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])≦0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5. [In]/([In]+[Zn]+[Sn])≦0.3 - - - (1), [In]/([In]+[Zn]+[Sn])≦1.4×{[Zn]/([Zn]+[Sn])}−0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])≦0.83 - - - (3), and 0.1≦[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.

Hiroaki Tao
Aya Miki
Shinya Morita
Satoshi Anno
Kugimiya Toshihiro
Park
Lee system
Anto
Kim Jian Hee

JP2016194848A

March 14, 2018

September 30, 2016

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KABUSHIKI KAISHA KOBE SEIKO SHO

H01L29/786; C01G19/00; C23C14/08; C23C14/34; H01L21/336; H01L21/363

JP2008243928A
JP2009253204A
JP2012094853A

WO2010023889A1
WO2010067571A1
US20130181218
US20100155717
US20110240988
US20110260121

Patent business corporation glory patent office
Kyuichi Ueki
Hisahiko Ueki
Tadashi Sugakawa
Hiroaki Ito
Akemi Takeoka

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