Title:
A method for removing a sediment in a semiconducting material of II-VI fellows by Annealing
Document Type and Number:
Japanese Patent JP6004601
Kind Code:
B2
Abstract:
Removing precipitates from a solid II-VI semiconductor material comprises heating the material to a temperature T between the II-VI/VI eutectic temperature and the maximum congruent sublimation temperature of the material, keeping the material at temperature T until the precipitates have been eliminated and cooling the material to room temperature at a rate corresponding to the material's congruent sublimation line. All steps are performed under an inert gas stream.
Inventors:
Bernard Peliciali
Application Number:
JP2007231529A
Publication Date:
October 12, 2016
Filing Date:
September 06, 2007
Export Citation:
Assignee:
INSERM(INSTITUT NATIONAL DE LA SANTE ET DE LA RECHERCHE MEDICALE)
International Classes:
C30B29/48; C30B11/00; C30B33/02
Domestic Patent References:
| JP3126693A | ||||
| JP6287499A |
Foreign References:
| WO1999059199A1 | ||||
| US5201985 | ||||
| US4481044 | ||||
| US4190486 | ||||
| EP0423463A1 |
Attorney, Agent or Firm:
Yasuhiko Murayama
Masatake Shiga
Takashi Watanabe
Shinya Mitsuhiro
Masatake Shiga
Takashi Watanabe
Shinya Mitsuhiro