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Title:
FORMING METHOD FOR INTERMEDIATE LAYER FORMED BETWEEN BASE MATERIAL AND DLC LAYER AND MANUFACTURING METHOD FOR DLC FILM COATED MEMBER
Document Type and Number:
Japanese Patent JP2017197804
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a forming method for an intermediate layer between a base material and a DLC layer and a manufacturing method for a DLC film coated member that improve anti-seizing properties of the intermediate layer formed between the base material and DLC layer.SOLUTION: A forming method for an intermediate layer 4 formed by sputtering between a base material 2 and a DLC layer 5 comprises one of a process of lowering sputtering output of a Ti target so as to gradually decreasing a Ti amount from a base material side to a DLC layer side in a process of forming a TiC-WC inclined layer 4d formed of WC and TiC on a TiC layer 4c formed on a base material surface by sputtering the Ti target and a WC target and a process of increasing the sputter output of the WC target so as to gradually increasing a WC amount from the base material side to the DLC layer side, and further comprises a process of forming a WC layer 4e on the TiC-WC layer 4d.SELECTED DRAWING: Figure 1

Inventors:
TASHIRO HIROKI
WATANABE MOTOHIRO
Application Number:
JP2016088817A
Publication Date:
November 02, 2017
Filing Date:
April 27, 2016
Export Citation:
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Assignee:
DOWA THERMOTECH KK
International Classes:
C23C14/06; B21D37/01; B21D37/20; C23C16/27
Domestic Patent References:
JP2001316800A2001-11-16
JP2004169137A2004-06-17
JP2015180764A2015-10-15
Attorney, Agent or Firm:
Koji Hagiwara
Tetsuo Kanamoto
Miaki Kametani