Title:
ｎ型半導体素子、ｎ型半導体素子の製造方法、無線通信装置および商品タグ
Document Type and Number:
Japanese Patent JP6954310
Kind Code:
B2
Abstract:
The purpose of the present invention is to provide an n-type semiconductor element which has excellent stability by a simple process. The gist of the present invention is an n-type semiconductor element which is provided with a substrate, a source electrode, a drain electrode, a gate electrode, a semiconductor layer that is in contact with the source electrode and the drain electrode, a gate insulating layer that insulates the semiconductor layer from the gate electrode, and a second insulating layer which is in contact with the semiconductor layer on the opposite side of the gate insulating layer with respect to the semiconductor layer, and which is characterized in that: the semiconductor layer contains nanocarbons; and the second insulating layer contains a polymer that has a structure represented by general formula (1) in at least some of the side chains.
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Inventors:
Kazuo Isogai
Junji Wakita
Seiichiro Murase
Junji Wakita
Seiichiro Murase
Application Number:
JP2018556946A
Publication Date:
October 27, 2021
Filing Date:
October 25, 2018
Export Citation:
Assignee:
TORAY INDUSTRIES,INC.
International Classes:
H01L21/336; C01B32/15; C01B32/168; C08K5/16; C08K5/49; C08L101/02; H01L29/786; H01L51/05; H01L51/30
Domestic Patent References:
| JP2009283924A |
Foreign References:
| WO2017130836A1 | ||||
| WO2005057665A1 | ||||
| WO2014142105A1 | ||||
| WO2009139339A1 | ||||
| WO2018180146A1 |