Title:
新規スルホニルジアゾメタン化合物、光酸発生剤、並びにそれを用いたレジスト材料及びパターン形成方法。
Document Type and Number:
Japanese Patent JP4359467
Kind Code:
B2
Abstract:
Provided are sulfonyldiazomethane compounds and photoacid generators suited for resist materials which generate less foreign matters after application, development and peeling, and in particular, are excellent in the pattern profile after the development; and resist materials and patterning process using them. Provided are sulfonyldiazomethane compounds represented by formula (1): Also provides are photoacid generators containing the sulfonyldiazomethane compounds, and a chemical amplification resist material comprising (A) a resin which changes its solubility in an alkali developer by action of an acid, and (B) a sulfonyldiazomethane compound of formula (1) capable of generating an acid by exposure to radiation. Provided is a patterning process comprising steps of applying the above-described resist material onto a substrate to form a coating, heating the coating, exposing the coating, and developing the exposed coating in a developer after an optional heat treatment.
Inventors:
Katsuhiro Kobayashi
Yoichi Osawa
Tsuyoshi Kanao
Fukuda Eiji
Keio Tanaka
Yoichi Osawa
Tsuyoshi Kanao
Fukuda Eiji
Keio Tanaka
Application Number:
JP2003304060A
Publication Date:
November 04, 2009
Filing Date:
August 28, 2003
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
C07C317/28; C07D317/56; C07D317/72; C07D319/08; C09K3/00; G03C5/18; G03F7/004; G03F7/038; G03F7/039; H01L21/027
Domestic Patent References:
| JP4211258A |
Attorney, Agent or Firm:
Shoichi Okuyama
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura