Title:
窒化物半導体基板
Document Type and Number:
Japanese Patent JP7403608
Kind Code:
B2
Abstract:
To improve a crystal quality of a nitride semiconductor substrate.SOLUTION: The method has: a step of preparing a ground substrate made of a single crystal of a III-group nitride semiconductor, having a main surface made into a mirror surface, and having a crystal face with a lowest index to the main surface as a (0001) face; a first step of directly epitaxial growing the single crystal of the III-group nitride semiconductor having a top face to which the (0001) face is exposed on the main face of the ground substrate, generating plural concave parts constituted by an inclined interface except for the (0001) face on the top face, gradually enlarging the inclined interface as it goes upward of the main face of the ground substrate, dissipating the (0001) face from the top face, and growing a first layer whose surface is constituted only by the inclined interface; and a second step of epitaxial growing the single crystal of the III-group nitride semiconductor on the first layer, dissipating the inclined interface and growing a second layer having a surface made into a mirror face. In the first step, plural concave prats are formed on the top face of the single crystal and the (0001) face is dissipated, so as to form plural valley parts and plural top parts on a surface of the first layer.SELECTED DRAWING: Figure 1
Inventors:
Takehiro Yoshida
Application Number:
JP2022171211A
Publication Date:
December 22, 2023
Filing Date:
October 26, 2022
Export Citation:
Assignee:
Sumitomo Chemical Co., Ltd.
International Classes:
C30B29/38; C23C16/34; C30B25/20
Domestic Patent References:
| JP2018024538A | ||||
| JP2011219304A | ||||
| JP2013209260A |
Foreign References:
| US20110248281 |
Attorney, Agent or Firm:
Masahiro Fukuoka
Hideo Tachibana
Hideo Tachibana
Previous Patent: Charge/discharge control method and charge/discharge device
Next Patent: railway vehicle
Next Patent: railway vehicle