Title:
新規なシクロジシラザン誘導体およびその製造方法、並びにそれを用いたシリコン含有薄膜
Document Type and Number:
Japanese Patent JP6267800
Kind Code:
B2
More Like This:
Inventors:
Jean Sejin
Yang Byung-il
Kim Seung Gi
Kim Jong Hyun
Kim Do Young
Island
Suk Jang Hyun
Issan Ick
Kim Myung Eun
Yang Byung-il
Kim Seung Gi
Kim Jong Hyun
Kim Do Young
Island
Suk Jang Hyun
Issan Ick
Kim Myung Eun
Application Number:
JP2016545305A
Publication Date:
January 24, 2018
Filing Date:
January 08, 2015
Export Citation:
Assignee:
DNF Co. Ltd.
International Classes:
C07F7/21; C23C16/42; H01L21/316; H01L21/318
Domestic Patent References:
| JP2012067383A | ||||
| JP11092520A |
Foreign References:
| WO2012026464A1 | ||||
| WO1992017527A1 |
Other References:
Journal of Molecular Structure (Theochem),1999年,Vol. 487,pp. 241-250
Journal of the Chemical Society, Dalton Transactions,1998年,pp. 2953-2954
Journal of Organometallic Chemistry,2013年,Vol. 732,pp. 58-91
Journal of the Chemical Society, Dalton Transactions,1998年,pp. 2953-2954
Journal of Organometallic Chemistry,2013年,Vol. 732,pp. 58-91
Attorney, Agent or Firm:
Hayashi Ichiyoshi
Tetsuo Shiba
Takuya Saito
Iwaike Mitsuru
Kazuhiro Kosuga
Hiroshi Hayashi
Tetsuo Shiba
Takuya Saito
Iwaike Mitsuru
Kazuhiro Kosuga
Hiroshi Hayashi
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