PURPOSE: To generate an ion beam, having a uniform and large current density in a large aperture, by lowering ion energy with the collision of electrons to a specimen such as a wafer prevented in a low energy region in electron beam excitation plasma.
CONSTITUTION: In an electron beam excitation ion irradiation device, a cathode 1, an acceleration passive electrode 2 doubling as an anode, an acceleration positive electrode 3, and a specimen installation part 4 are aligned in this order, and a magnetism shutter 21 is installed in this side of the specimen installation part 4. This can make low irradiation ion energy, capable of restraining an electron component, colliding with the surface of a specimen 18 with large kinetic energy, to allow fine dry etching without imparting damage to the specimen 18. Resultingly, reliability for product accuracy can be improved.
HAMAGAKI MANABU
AOYANAGI KATSUNOBU
YAMADA TAKESHI
RIYUUJI MAKOTO
TOKAI MASAKUNI
KAJIYAMA YOUSUKE
KAWASAKI HEAVY IND LTD
| JPH01105539A | 1989-04-24 |