Title:
p-CHANNEL THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE p-CHANNEL THIN-FILM TRANSISTOR, AND DISPLAY DEVICE
Document Type and Number:
Japanese Patent JP2007043138
Kind Code:
A
Abstract:
To provide a thin-film transistor with which a TFT having higher mobility of electrons (or holes) can be manufactured, a method of manufacturing the thin-film transistor, and a display device.
The thin-film transistor 1 has a source region S, a channel region C and a drain region D which are provided on a semiconductor thin film 4a that is crystal-grown in a lateral direction; and a gate insulation film 11 and a gate electrode 12 which are provided on the top of the channel region C. An end of the drain 10 on the channel region C side of the drain region D is formed so as to be positioned near the finish position 8 of the crystal growth.
Inventors:
NAKASAKI YOSHIAKI
KAWACHI GENSHIRO
KETSUSAKO MITSUNORI
MATSUMURA MASAKIYO
KAWACHI GENSHIRO
KETSUSAKO MITSUNORI
MATSUMURA MASAKIYO
Application Number:
JP2006185959A
Publication Date:
February 15, 2007
Filing Date:
July 05, 2006
Export Citation:
Assignee:
ADV LCD TECH DEV CT CO LTD
International Classes:
H01L29/786; G02F1/1368; H01L21/20; H01L21/336
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto