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Title:
p型半導体膜および電子デバイス
Document Type and Number:
Japanese Patent JP6547140
Kind Code:
B1
Abstract:
正孔移動度がより十分に高いヘテロフラーレンを含むp型半導体膜を提供する。p型半導体膜は、フラーレンを構成する炭素原子のうちn+r(個)(nおよびrはともに正の奇数)の炭素原子をn個のホウ素原子およびr個の窒素原子で置換したヘテロフラーレンを含む。

Inventors:
Nobuyuki Matsuzawa
Masako Sasako
Junichi Naka
Application Number:
JP2019510975A
Publication Date:
July 24, 2019
Filing Date:
August 07, 2018
Export Citation:
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Assignee:
Panasonic IP Management Co., Ltd.
International Classes:
H01L51/30; C01B32/154; C01B32/156; H01L29/786; H01L51/05
Domestic Patent References:
JPH072507A1995-01-06
JPH1160222A1999-03-02
Foreign References:
WO2005066385A12005-07-21
Other References:
PATTANAYAK, JAYASREE, ET AL.: "Boron-Nitrogen (BN) Substitution Patterns in C/BN Hybrid Fullerenes: C60-2x(BN)x", J. PHYS. CHEM. A, vol. 105, JPN6018042993, 2001, pages 8376 - 8384, XP055132020, ISSN: 0004031775, DOI: 10.1021/jp011391m
YEE, KYEONG, ET AL.: "The Electronic Structure and Stability of the Heterofullerene : C(60-2x)(BN)x (x=1-7)", BULL. KOREAN CHEM. SOC., vol. 24, no. 4, JPN7018003708, 2003, pages 494 - 498, ISSN: 0004031776
CHEN, ZHONGFANG, ET AL.: "Calculations on all possible isomers of the substituted fullerenes C58X2 (X=N,B) using semiempirical", J. CHEM. SOC., FARADAY TRANS., vol. 94, no. 16, JPN7018003709, 1998, pages 2269 - 2276, XP055581496, ISSN: 0004031777
Attorney, Agent or Firm:
Kenji Kamada
Koichi Nomura