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Patent Searching and Data


Title:
MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JPH0786391
Kind Code:
A
Abstract:

PURPOSE: To prevent a deep groove from being cut in a shallow groove forming region and to hollow out a groove accurately controlling it in depth.

CONSTITUTION: A buried collector layer 2, an N-type epitaxial layer 3, a silicon oxide film 4, a silicon nitride film 5, a polycrystalline silicon film 6, and a silicon oxide film 7 are formed on a P-type silicon substrate 1 [figure (a)]. The film 7 on a collector isolating region 3a is removed, and then the films 4 to 7 on an element isolating region 9a are removed [figure (b)]. A part of a silicon substrate where the element, isolating region 9a is located is hollowed as deep as prescribed. At this point, the polycrystalline silicon film 6 on the collector isolating region 8a is removed at the same time [figure (c)]. Thereafter, the films 4 and 5 on the collector isolating region 8a are removed, and the silicon substrate 18 hollowed out as deep as prescribed.


Inventors:
TAKEMURA HISASHI
Application Number:
JP18684293A
Publication Date:
March 31, 1995
Filing Date:
June 30, 1993
Export Citation:
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Assignee:
NEC CORP
International Classes:
H01L21/70; H01L21/308; H01L21/331; H01L21/76; H01L21/762; H01L21/763; H01L29/73; (IPC1-7): H01L21/76; H01L21/78
Attorney, Agent or Firm:
Yusuke Omi