Title:
A pattern formation method, a resist composition, a high molecular compound, and a monomer
Document Type and Number:
Japanese Patent JP6065862
Kind Code:
B2
Abstract:
A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, PEB, and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition is based on a polymer comprising recurring units (a1) of formula (1) wherein R1 is H or CH3, R2 and R3 are H, F or a monovalent hydrocarbon group, R4 is H or a monovalent hydrocarbon group, R5 and R6 are a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, and k1=0 or 1. A fine hole or trench pattern can be formed therefrom.
Inventors:
Koji Hasegawa
Justice
Tomohiro Kobayashi
Kazuhiro Katayama
Justice
Tomohiro Kobayashi
Kazuhiro Katayama
Application Number:
JP2014049908A
Publication Date:
January 25, 2017
Filing Date:
March 13, 2014
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/038; C08F220/28; G03F7/004; G03F7/039; G03F7/32
Domestic Patent References:
| JP2013037351A | ||||
| JP2009258506A | ||||
| JP2003195502A | ||||
| JP2012149253A | ||||
| JP2011231312A | ||||
| JP2014137473A | ||||
| JP2013125156A | ||||
| JP2004182796A | ||||
| JP2011132273A |
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Katsuhiko Masaki
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Katsuhiko Masaki