Title:
パターン形成方法及びレジスト材料
Document Type and Number:
Japanese Patent JP5573578
Kind Code:
B2
Abstract:
The process forms a pattern by applying a resist composition onto a substrate to form a resist film, baking, exposure, post-exposure baking, and development. The resist composition comprises a polymer comprising recurring units having an acid labile group and substantially insoluble in alkaline developer, a PAG, a PBG capable of generating an amino group, a quencher for neutralizing the acid from PAG for inactivation, and an organic solvent. A total amount of amino groups from the quencher and PBG is greater than an amount of acid from PAG. An unexposed region and an over-exposed region are not dissolved in developer whereas only an intermediate exposure dose region is dissolved in developer. Resolution is doubled by splitting a single line into two through single exposure and development.
Inventors:
Hatakeyama 潤
Masaki Ohashi
Yoichi Osawa
Kazuhiro Katayama
Masaki Ohashi
Yoichi Osawa
Kazuhiro Katayama
Application Number:
JP2010230271A
Publication Date:
August 20, 2014
Filing Date:
October 13, 2010
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/039; C09K3/00; G03F7/004; H01L21/027
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa