Title:
パターン形成方法
Document Type and Number:
Japanese Patent JP4150660
Kind Code:
B2
Abstract:
In a pattern formation method, pattern exposure is performed by selectively irradiating, with exposing light, a resist film formed on a substrate and made of a resist including a carboxylic acid derivative. A first resist pattern is formed by developing the resist film after the pattern exposure, and subsequently, the first resist pattern is exposed to a solution including a reducing agent for reducing the carboxylic acid derivate. Thereafter, a water-soluble film including a crosslinking agent for causing crosslinking with a material of the first resist pattern is formed on the first resist pattern having been exposed to the solution. Subsequently, a crosslinking reaction is caused by annealing the water-soluble film between a portion of the water-soluble film and a portion of the first resist pattern in contact with each other on the sidewall of the first resist pattern, and then, a portion of the water-soluble film not reacted with the first resist pattern is removed. Thus, a second resist pattern made of the first resist pattern and a portion of the water-soluble film remaining on the sidewall of the first resist pattern is formed.
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Inventors:
Masataka Endo
Masako Sasako
Masako Sasako
Application Number:
JP2003417834A
Publication Date:
September 17, 2008
Filing Date:
December 16, 2003
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
G03F7/40; G03C5/00; G03F7/00; H01L21/027
Domestic Patent References:
| JP63115171A | ||||
| JP2002343698A |
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Yuji Takeuchi
Katsumi Imae
Tomoo Harada
Hiroshi Koyama
Hiroshi Takeuchi
Yuji Takeuchi
Katsumi Imae
Tomoo Harada