Title:
A penetration electrode substrate, a manufacturing method for the same, and a semiconductor device using a penetration electrode substrate
Document Type and Number:
Japanese Patent JP5994825
Kind Code:
B2
Abstract:
A through-electrode substrate includes a base including a first surface and a second surface mutually opposing each other, and a through-electrode arranged in a through-hole passing through the second surface from the first surface of the base, wherein the through-electrode includes an first end surface of the first surface side and an second end surface of the second surface side exposed from the base in the first surface and the second surface, and a periphery edge of one or both of the first end surface of the first surface side and the second end surface of the second surface side is covered by a part of the base.
Inventors:
Masao Asano
Application Number:
JP2014160122A
Publication Date:
September 21, 2016
Filing Date:
August 06, 2014
Export Citation:
Assignee:
Dai Nippon Printing Co.,Ltd.
International Classes:
H01L23/15; H01L21/3205; H01L21/768; H01L23/12; H01L23/14; H01L23/32; H01L23/522; H05K1/11; H05K3/06; H05K3/40
Domestic Patent References:
| JP2007184314A | ||||
| JP2013033894A |
Foreign References:
| WO2012108381A1 |
Attorney, Agent or Firm:
Takahashi Hayashi & Partners