Title:
フォトマスク及びその製造方法
Document Type and Number:
Japanese Patent JP4335128
Kind Code:
B2
Abstract:
A photo mask and a method for fabricating the same are described, in which a transparent substrate is covered with a phase inversion light-transmitting layer, a plurality of small sized light-transmitting holes are aggregately formed at dense intervals in an isolated pattern hole region of the phase inversion light-transmitting layer, and lights transmitting the light-transmitting holes and the phase inversion light-transmitting layer are guided to cause a series of interference phenomena such as sidelobe phenomena, so that the isolated pattern hole can sufficiently receive lights as the light intensity increases by way of the sidelobe phenomena. If the sidelobe phenomena regarded as a defect factor are used to allow the isolated pattern hole to sufficiently receive lights after aggregately forming the small sized light-transmitting holes in the isolated pattern hole region of the transparent substrate, the step of additionally forming serif holes is naturally skipped, thereby improving yield of the product and controlling increase of the production cost.
Inventors:
Li Jun Seok
Application Number:
JP2004376941A
Publication Date:
September 30, 2009
Filing Date:
December 27, 2004
Export Citation:
Assignee:
Anam Semiconductor Limited
International Classes:
G03C5/00; G03F1/32; G03F1/68; G03F9/00; H01L21/027
Domestic Patent References:
| JP2002351052A | ||||
| JP7064273A | ||||
| JP2003233164A | ||||
| JP2002090979A |
Attorney, Agent or Firm:
Sadao Kumakura
Fumiaki Otsuka
Shishido Kaichi
Village shrine Atsuo
Disciple Maru Ken
Ino Sato
Fumiaki Otsuka
Shishido Kaichi
Village shrine Atsuo
Disciple Maru Ken
Ino Sato
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