Title:
フォトレジスト重合体とその製造方法、フォトレジスト組成物、及びフォトレジストパターンの形成方法
Document Type and Number:
Japanese Patent JP4028131
Kind Code:
B2
Abstract:
The present invention relates to a polymer represented by following Formula 1 and a method of forming a micro pattern using the same:wherein R1 is a C1-C10 straight- or branched-chain substituted alkyl group, or a benzyl group; R2 is C1-C10 primary, secondary or tertiary alcohol group; m and n independently represent a number from 1 to 3; and X, Y and Z are the respective polymerization ratios of the co-monomers.The photoresist polymer according to the present invention is suitable for forming an ultra-micro pattern such as used in 4 G or 16 G DRAM semiconductor devices using a light source such as ArF, an e-beam, EUV, or an ion-beam.
Inventors:
Chung Zhao Chang
Kim Ming-soo
Kin Toki
Roh
Lee Nemori
Chung Min Ho
Choru Kei
White base ho
Kim Ming-soo
Kin Toki
Roh
Lee Nemori
Chung Min Ho
Choru Kei
White base ho
Application Number:
JP12538199A
Publication Date:
December 26, 2007
Filing Date:
April 30, 1999
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C08F222/40; H01L21/027; C08F222/06; C08F232/04; C08F232/08; G03F7/004; G03F7/038; G03F7/039; G03F7/38
Domestic Patent References:
| JP9022117A | ||||
| JP11228536A |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune