Title:
A photovoltaic device and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP6206687
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To increase the photoelectric conversion efficiency in a photovoltaic device.SOLUTION: In a photovoltaic device, the interface between a semiconductor substrate 10 and an i-type amorphous layer 12i is a first oxidized interface containing oxygen of 1×10/cmor more, the interface between the semiconductor substrate 10 and an i-type amorphous layer 16i is a second oxidized interface containing oxygen of 1×10/cmor more; in the i-type amorphous layer 12i, a first high concentration oxygen area having an oxygen concentration ranging from not less than 1×10/cmto not more than 1×10/cmis provided in a region of 5 nm or less from the first oxidized interface, and in the i-type amorphous layer 16i, a second high concentration oxygen area having an oxygen concentration which ranges from not less than 1×10/cmto not more than 9×10/cmand is lower than that of the first high concentration oxygen area is provided in a region of 5 nm or less from the second oxidized interface.SELECTED DRAWING: Figure 2
Inventors:
Ayumu Yano
Akane Ogane
Akane Ogane
Application Number:
JP2016038578A
Publication Date:
October 04, 2017
Filing Date:
March 01, 2016
Export Citation:
Assignee:
Panasonic IP Management Co., Ltd.
International Classes:
H01L31/0747
Domestic Patent References:
| JP2008235400A | ||||
| JP2003258287A | ||||
| JP2002329878A |
Other References:
T.Mueller,"Crystalline silicon surface passivation by high-frequency plasma-enhanced chemical-vapor-deposited,Journal of Applied Physics,Vol.107, No.1, 5 January 2010,014504
H.Fujiwara,"Application of hydrogenated amorphous silicon oxide layers to c-Si heterojunction solar cells",Applied Physics Letters,Vol.91, No.13, 26 September 2007,133508
H.Fujiwara,"Application of hydrogenated amorphous silicon oxide layers to c-Si heterojunction solar cells",Applied Physics Letters,Vol.91, No.13, 26 September 2007,133508
Attorney, Agent or Firm:
Patent Corporation yki International Patent Office