Title:
圧電MEMSスイッチ及びその作成方法
Document Type and Number:
Japanese Patent JP2009528667
Kind Code:
A
Abstract:
MEMS piezoelectric switches 100 that provide advantages of compact structure ease of fabrication in a single unit, and that are free of high temperature-induced morphological changes of the contact materials and resultant adverse effects on properties. High temperature-induced morphological changes refer to changes that occur during fabrication when metallic contacts such as radio frequency lines 125, 130 and shorting bars 150 are exposed to temperatures required to anneal a piezoelectric layer or those temperatures encountered during high temperature deposition of the piezoelectric layer, if such process is used instead.
Inventors:
Liu, Lian Jun
Application Number:
JP2008557439A
Publication Date:
August 06, 2009
Filing Date:
January 31, 2007
Export Citation:
Assignee:
Freescale Semiconductor, Inc.
International Classes:
H01H49/00; B81B3/00; B81C1/00; H01H57/00
Attorney, Agent or Firm:
Shinjiro Ono
Kazuo Shamoto
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Naoki Kazuma
Kazuo Shamoto
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Naoki Kazuma