Title:
A piezo-electric object thin film and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP5966199
Kind Code:
B2
Abstract:
A piezoelectric thin film (1) is formed through sputtering and consists essentially of scandium aluminum nitride. The carbon atomic content is 2.5 at% or less. When producing the piezoelectric thin film (1), scandium and aluminum are sputtered simultaneously on a substrate (21) from a scandium aluminum alloy target material (10) having a carbon atomic content of 5 at% or less in an atmosphere where at least nitrogen gas exists. The sputtering may be conducted also by applying an ion beam (31) on an opposing surface of the alloy target material at an oblique angle. Moreover, aluminum and scandium may be also sputtered simultaneously on the substrate from an Sc target material and an Al target material. As a result, a piezoelectric thin film which exhibits excellent piezoelectric properties and a method for the same can be provided.
Inventors:
Akihiko Teshigawara
Kazuhiko Kano
Morito Akiyama
Keiko Nishikubo
Kazuhiko Kano
Morito Akiyama
Keiko Nishikubo
Application Number:
JP2013115477A
Publication Date:
August 10, 2016
Filing Date:
May 31, 2013
Export Citation:
Assignee:
株式会社デンソー
国立研究開発法人産業技術総合研究所
国立研究開発法人産業技術総合研究所
International Classes:
H01L41/316; H01L41/187
Domestic Patent References:
| JP2013014806A | ||||
| JP2009010926A | ||||
| JP2013148562A |
Foreign References:
| WO2013175985A1 |
Attorney, Agent or Firm:
Patent Business Corporation Aichi International Patent Office