Title:
圧電薄膜素子
Document Type and Number:
Japanese Patent JP7425960
Kind Code:
B2
Abstract:
Provided is a piezoelectric thin film device containing: a first electrode layer; and a piezoelectric thin film. The first electrode layer contains a metal Me having a crystal structure. The piezoelectric thin film contains aluminum nitride having a wurtzite structure. The aluminum nitride contains a divalent metal element Md and a tetravalent metal element Mt. [Al] is an amount of Al contained in the aluminum nitride, [Md] is an amount of Md contained in the aluminum nitride, [Mt] is an amount of Mt contained in the aluminum nitride, ([Md]+[Mt])/([Al]+[Md]+[Mt]) is 36 to 70 atom %. LALN is a lattice length of the aluminum nitride in a direction that is approximately parallel to a surface of the first electrode layer with which the piezoelectric thin film is in contact, LMETAL is a lattice length of Me in a direction, and LALN is longer than LMETAL.
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Inventors:
Junichi Kimura
Yuka Inoue
Yuka Inoue
Application Number:
JP2019196629A
Publication Date:
February 01, 2024
Filing Date:
October 29, 2019
Export Citation:
Assignee:
SAE Magnetics(H.K.)Ltd.
International Classes:
H10N30/853; H10N30/076; H10N30/079; H10N30/87
Domestic Patent References:
| JP2004095843A | ||||
| JP2019169612A | ||||
| JP2013219743A | ||||
| JP2014121025A | ||||
| JP2019186691A | ||||
| JP2013173647A | ||||
| JP2006333276A | ||||
| JP2018195807A | ||||
| JP2019009771A | ||||
| JP2018014643A | ||||
| JP2015233042A |
Foreign References:
| WO2019059051A1 | ||||
| US20160099288 | ||||
| US20190013458 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Takashi Mikami
Yoshiki Kuroki
Takashi Mikami