Title:
PLANAR AVALANCHE PHOTODIODE
Document Type and Number:
Japanese Patent JP2017199935
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a novel avalanche photodiode.SOLUTION: An avalanche photodiode includes a first semiconductor layer, a multiplication layer directly adjacent to the first semiconductor layer, a charge control layer directly adjacent to the multiplication layer on the opposite side to the first semiconductor layer, a second semiconductor layer directly adjacent to the charge control layer on the opposite side to the multiplication layer, and low-doped or undoped, a gradient absorption layer directly adjacent to the second semiconductor layer on the opposite side to the first semiconductor layer, and a blocking layer located directly adjacent to the gradient absorption layer on the opposite side to the second semiconductor layer. The gradient absorption layer has a cross-sectional width shorter than those of the charge control layer and multiplication layer, and the cross-sectional widths of the charge control layer and multiplication layer are equal to each other.SELECTED DRAWING: Figure 1
Inventors:
BARRY LEVINE
Application Number:
JP2017146759A
Publication Date:
November 02, 2017
Filing Date:
July 28, 2017
Export Citation:
Assignee:
PICOMETRIX LLC
International Classes:
H01L31/107
Domestic Patent References:
| JP2011198808A | 2011-10-06 | |||
| JP2004031707A | 2004-01-29 | |||
| JP2007250585A | 2007-09-27 | |||
| JP2005539368A | 2005-12-22 | |||
| JP2010147177A | 2010-07-01 | |||
| JP2007311455A | 2007-11-29 |
Foreign References:
| US20060001118A1 | 2006-01-05 |
Attorney, Agent or Firm:
Asamura patent office