Title:
プラズマ処理装置
Document Type and Number:
Japanese Patent JP7394694
Kind Code:
B2
Abstract:
To suppress a by-product formed by etching from depositing to a window for introduction of high-frequency waves while etching a substrate efficiently.SOLUTION: Provided is a plasma processing device for performing a plasma process on a substrate. The plasma processing device comprises: a plasma generating part for generating plasma in a process chamber; a support structure for turnably supporting the substrate set on an inclined setting plane in the process chamber; a first slit plate of quartz having first slits formed therein and provided between the plasma generating part and the support structure; and a second slit plate of quartz having second slits formed therein and provided under the first slit plate between the plasma generating part and the support structure. In the plasma processing device, the first slit is shifted in position from the second slit adjacent thereto in a direction opposite to a direction of inclination of the setting plane.SELECTED DRAWING: Figure 1
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Inventors:
Hiroyuki Yokohara
Koji Maeda
Yasunobu Suzuki
Atsushi Shimada
Koji Maeda
Yasunobu Suzuki
Atsushi Shimada
Application Number:
JP2020074978A
Publication Date:
December 08, 2023
Filing Date:
April 20, 2020
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065; H05H1/46
Domestic Patent References:
| JP201798521A | ||||
| JP6118458B1 |
Foreign References:
| WO2013065531A1 | ||||
| WO2019003663A1 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito