Title:
PLASMA PROCESSING APPARATUS
Document Type and Number:
Japanese Patent JP2018041531
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide an inductively coupled plasma processing apparatus in which eccentricity distribution of plasma can be improved.SOLUTION: A plasma processing apparatus including a processing chamber where a sample is subjected to plasma treatment, a guiding window for sealing the upper part of the processing chamber airtightly, an induction antenna placed above the guiding window and forming an induction field, a high frequency power supply for supplying high frequency power to the induction antenna, and a Faraday shield supplied with high frequency power from the high frequency power supply and placed between the guiding window and the induction antenna, is further provided with monitor means for monitoring a current flowing to the Faraday shield, and a control section for controlling the monitored current.SELECTED DRAWING: Figure 1
Inventors:
SATAKE MAKOTO
YOKOGAWA KENETSU
KAWAGUCHI TADAYOSHI
ICHINO TAKAMASA
YOKOGAWA KENETSU
KAWAGUCHI TADAYOSHI
ICHINO TAKAMASA
Application Number:
JP2016172382A
Publication Date:
March 15, 2018
Filing Date:
September 05, 2016
Export Citation:
Assignee:
HITACHI HIGH TECH CORP
International Classes:
H05H1/46; H01L21/3065
Domestic Patent References:
| JP2014120564A | 2014-06-30 | |||
| JP2000323298A | 2000-11-24 | |||
| JP2015146428A | 2015-08-13 | |||
| JP2016072138A | 2016-05-09 |
Foreign References:
| US20040173314A1 | 2004-09-09 |
Attorney, Agent or Firm:
Shigemi Iwasaki