Title:
a point defect concentration calculation method, a Grown-in defective calculation method, and a Grown-in defective side -- internal division -- a cloth calculation method and the silicon single crystal manufacturing method using these
Document Type and Number:
Japanese Patent JP6135611
Kind Code:
B2
Inventors:
Ryoji Hoshi
Shunei Kouchi
Shunei Kouchi
Application Number:
JP2014137908A
Publication Date:
May 31, 2017
Filing Date:
July 03, 2014
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
C30B29/06
Domestic Patent References:
| JP2013193897A | ||||
| JP2003073192A | ||||
| JP2004356253A | ||||
| JP2004091316A | ||||
| JP2003040695A | ||||
| JP10256174A |
Attorney, Agent or Firm:
Mikio Yoshimiya