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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH0745617
Kind Code:
A
Abstract:

PURPOSE: To obtain a semiconductor device having metallic wiring which is improved in electromigration resistance and stress migration resistance, by constituting the lowest layer of the metallic wiring of a thin TiN film having a specific crystal orientation.

CONSTITUTION: A semiconductor device has metallic wiring on a substrate and the lowest layer of the wiring is constituted of a thin TiN film the upper surface of which has {111}-plane orientation. In addition, the crystal axis of the thin film corresponding to the main length direction (y) of the wiring is roughly represented by <112>-axis which intersects the crystal axis representing the {111}-plane at right angles. For example, crystal grains 101 and 102 of the TiN wiring indicate {111}-plane orientations and their <112>-axes are roughly oriented in the length direction (y) of the wiring. In addition, crystal grains 104 and 105 of an Al-wiring alloy formed on the TiN wiring are oriented in the (111)-plane and their <112>-axes are roughly oriented in the length direction (y) of the wiring.


Inventors:
OTAKA KOICHI
Application Number:
JP20894893A
Publication Date:
February 14, 1995
Filing Date:
July 30, 1993
Export Citation:
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Assignee:
RICOH KK
RICOH GEN ELECTRON RES INST
International Classes:
H01L21/285; H01L21/28; H01L21/3205; H01L23/52; (IPC1-7): H01L21/3205; H01L21/285
Attorney, Agent or Firm:
Noguchi Shigeo