Title:
上部反射防止膜(Top Anti-Reflective Coating;TARC)の重合体およびこの製造方法、並びにこれを含む上部反射防止膜の組成物
Document Type and Number:
Japanese Patent JP4694231
Kind Code:
B2
Abstract:
Disclosed herein are a top anti-reflective coating polymer used in a photolithography process, which is one of the fabrication processes for a semiconductor device, a method for preparing the anti-reflective coating polymer, and an anti-reflective coating composition comprising the anti-reflective coating polymer. Specifically, the top anti-reflective coating polymer is used in immersion lithography for the fabrication of a sub-50 nm semiconductor device. The top anti-reflective coating polymer is represented by Formula 1 below: wherein R1, R2 and R3 are independently hydrogen or a methyl group; and a, b and c represent the mole fraction of each monomer, and are in the range between about 0.05 and about 0.9. Since a top anti-reflective coating formed using the above anti-reflective coating polymer is not soluble in water, it can be applied to immersion lithography using water as the medium for a light source. In addition, since the top anti-reflective coating can reduce the reflectance from an underlayer, the uniformity of CD is improved, thus enabling the formation of an ultrafine pattern.
Inventors:
Jun Jae-Chan
Application Number:
JP2005082304A
Publication Date:
June 08, 2011
Filing Date:
March 22, 2005
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C08F220/56; C08F220/18; C08G61/02; G03C1/492; G03F7/09; G03F7/11; H01L21/027
Domestic Patent References:
| JP2002341533A |
Foreign References:
| US5879853 |
Attorney, Agent or Firm:
Kenji Yoshida
Jun Ishida
Jun Ishida