Title:
POWER SEMICONDUCTOR CIRCUIT HAVING FIELD EFFECT TRANSISTOR
Document Type and Number:
Japanese Patent JP2017017688
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a power semiconductor circuit having little energy loss.SOLUTION: A power semiconductor circuit comprises a field effect transistor (T1, T2), and a control mechanism (3) having a drive mechanism (2) and a low voltage detection circuit (5). The drive mechanism (2) is configured to drive the field effect transistor (T1, T2) and is electrically connected to the gate (G) of the field effect transistor (T1, T2). The low voltage detection circuit (5) is configured so that a power voltage detection signal (F) is generated when a power semiconductor voltage (U1, U2) applied between the drain (D) and source (S) of the field effect transistor (T1, T2) falls below a specific voltage value (Uw). The drive mechanism (2) is configured so as to energize the field effect transistor (T1, T2) when there is an energization command for energizing the field effect transistor (T1, T2) and the low voltage detection signal (F) exists.SELECTED DRAWING: Figure 1
Inventors:
GUNTER KOENIGSMAN
THOMAS ECK
THOMAS ECK
Application Number:
JP2016124322A
Publication Date:
January 19, 2017
Filing Date:
June 23, 2016
Export Citation:
Assignee:
SEMIKRON ELEKTRONIK GMBH & CO KG
International Classes:
H03K17/042; H03K17/04; H03K17/687; H03K17/695
Domestic Patent References:
| JP2012060514A | 2012-03-22 | |||
| JP2007068269A | 2007-03-15 | |||
| JP2007110845A | 2007-04-26 |
Attorney, Agent or Firm:
Hideki Imai
Fujita Akira
Takashi Matsumoto
Fujita Akira
Takashi Matsumoto