Title:
The process for growth of low dislocation density GaN
Document Type and Number:
Japanese Patent JP6218788
Kind Code:
B2
Abstract:
High quality free standing GaN is obtained using a new modification of the Epitaxial Lateral Overgrowth technology in which 3D islands or features are created only by tuning the growth parameters. Smoothing these islands (2D growth) is achieved thereafter by setting growth conditions producing enhanced growth. The repetition of 3D-2D growth results in multiple bending of the threading dislocations thus producing thick layers or free standing GaN with threading discloation density below 10 6 cm -2 .
Inventors:
Bernard, Beaumont
Jean-Pierre, Foley
Pierre, Givar
Jean-Pierre, Foley
Pierre, Givar
Application Number:
JP2015197042A
Publication Date:
October 25, 2017
Filing Date:
October 02, 2015
Export Citation:
Assignee:
Saint-Gobain Cristeau et Tektur
International Classes:
C30B29/38; C23C16/34; C23C16/52; C30B25/16; H01L21/205
Domestic Patent References:
| JP2002329665A | ||||
| JP2004099337A | ||||
| JP2003101157A | ||||
| JP2005101475A | ||||
| JP2005527978A | ||||
| JP2002313739A | ||||
| JP2002134416A | ||||
| JP2005534182A | ||||
| JP2000183464A | ||||
| JP2005019872A |
Foreign References:
| WO2005031045A2 | ||||
| US20020005593 |
Attorney, Agent or Firm:
Ippei Watanabe
Shigeru Koike
Shigeru Koike