フォトレジスト単量体、フォトレジスト共重合体、フォトレジスト共重合体の製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、及び半導体素子

Title:

Document Type and Number:

Japanese Patent JP3587739

Kind Code:

B2

Abstract:

The present invention provides a photoresist monomer represented by the following formula 2; a photoresist copolymer represented by the following formula 100; and a photoresist composition containing the same.wherein, R1 and R2 are independently -COOH or -R-COOH; and R is a substituted or unsubstituted (C1-C10) alkyl.wherein, R1 and R2 are independently -COOH or -R-COOH ; R is a substituted or unsubstituted (C1-C10) alkyl; R3 is -COOR* or -R'COOR*; R* is an acid labile group; R' is a substituted or unsubstituted (C1-C10) alkyl; R4 is H or R3; R5 is a substituted or unsubstituted (C1-C10) alkyl; and a:b:c is the polymerization ratio of the comonomer.

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Inventors:

Chung Min Ho
Chung Zhao Chang
Lee Nemori
White base ho

Application Number:

JP21284099A

Publication Date:

November 10, 2004

Filing Date:

July 27, 1999

Export Citation:

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Assignee:

HYNIX SEMICONDUCTOR INC.

International Classes:

C07C61/29; C07C69/608; C08F20/20; C08F22/06; C08F32/00; C08F220/20; C08F222/06; C08F232/00; C08F232/08; G03F7/004; G03F7/038; G03F7/039; (IPC1-7): C08F232/00; C07C61/29; C08F220/20; C08F222/06; G03F7/004; G03F7/039

Domestic Patent References:

JP10130340A

Attorney, Agent or Firm:

Hiroshi Arafune
Yoshio Arafune

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