Title:
フォトレジスト重合体、フォトレジスト重合体の製造方法、フォトレジスト組成物、フォトレジストパターン形成方法及び半導体素子
Document Type and Number:
Japanese Patent JP4041335
Kind Code:
B2
Abstract:
Photoresist polymers, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers containing maleimide represented by Formula 1. Photoresist compositions including the photoresist polymers have excellent etching resistance, heat resistance and adhesiveness, and development ability in aqueous tetramethylammonium hydroxide (TMAH) solution. As the compositions have low light absorbance at 193 nm and 157 nm wavelength, they are suitable for a process using ultraviolet light source such as VUV (157 nm). Formula 1 wherein, 1, R1, R2, R3, R, R', R'', R''', X, a and b are defined in the specification.
Inventors:
Lee Nemori
Chung Zhao Chang
Request
Chung Zhao Chang
Request
Application Number:
JP2002116095A
Publication Date:
January 30, 2008
Filing Date:
April 18, 2002
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C08F222/40; C08F22/40; C08F32/02; C08F232/02; G03F7/004; G03F7/039; H01L21/027
Domestic Patent References:
| JP2001302735A | ||||
| JP2000080124A | ||||
| JP2146045A |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune