Title:
【発明の名称】ケイ素を浸透させた多孔性の多結晶質ダイヤモンド成形体の製造方法
Document Type and Number:
Japanese Patent JP2991728
Kind Code:
B2
Abstract:
Disclosed is a method for producing a polycrystalline diamond compact which comprises providing a thermally-stable compact comprising between about 70% and 95% by volume diamond, characterized by a network of interconnected, empty pores dispersed throughout, and containing between about 0.05% and 3% by volume of a catalyst/sintering aid material; and subjecting said thermally-stable compact and a silicon material to a partial vacuum at an elevated temperature for a time adequate for said silicon material to infiltrate into said compact pores. The silicon material has a melting point not above about 1410 DEG C and preferably is a silicon alloy having a melting point range of between about 800 DEG and 1400 DEG C.
Inventors:
YUN SAMU CHO
Application Number:
JP30783189A
Publication Date:
December 20, 1999
Filing Date:
November 29, 1989
Export Citation:
Assignee:
JENERARU EREKUTORITSUKU CO
International Classes:
C04B35/52; C04B41/88; C04B41/50; C04B41/85; C22C26/00; (IPC1-7): C04B41/88
Other References:
【文献】米国特許4664705(US,A)
Attorney, Agent or Firm:
Tokunji Ikunuma