Title:
半導体素子の製造方法
Document Type and Number:
Japanese Patent JP4267298
Kind Code:
B2
Abstract:
Disclosed is a method for manufacturing a semiconductor device, wherein a reticle that can expose only a portion where the pattern is changed on an edge area of a wafer is manufactured, and then a double exposure process is performed by using the reticle, whereby all of the photoresist on the part where the pattern is changed is removed. There are advantages that the yield of the semiconductor device is enhanced, and the electrical properties thereof are improved.
Inventors:
Sun-Tae Choi
Moon-Wo Kim
Gwang-Chul Kim
Moon-Wo Kim
Gwang-Chul Kim
Application Number:
JP2002325419A
Publication Date:
May 27, 2009
Filing Date:
November 08, 2002
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
H01L21/027; G03C5/00; G03F1/68; G03F7/20; G03F9/00
Domestic Patent References:
| JP7142309A | ||||
| JP2001272767A | ||||
| JP2000252281A | ||||
| JP2047649U |
Attorney, Agent or Firm:
Kenji Yoshida
Jun Ishida
Jun Ishida