Title:
基板、特に光学、電子工学または電子光学用基板の製造方法、およびこの製造方法により得られる基板
Document Type and Number:
Japanese Patent JP2004517472
Kind Code:
A
Abstract:
Substrate for (opto)-electronic devices is made by transferring a seed layer (2) onto a support (12) by molecular adhesion at the bonding interface, epitaxial growth of a useful layer (16) to thickness less than 10, preferably less than 5, microns on the seed layer, and applying stresses to detach the combined seed and useful layers from the support at the bonding surface. Detachment of the combined seed layer (2) from the support (12) is achieved by applying mechanical, thermal, electrostatic or laser irradiation stress. The coefficient of thermal expansion of the support material is 0.7-3 times that of the useful layer (16). The seed layer (2) can adapt to the thermal expansion of the support (12) and the useful layer (16), and has crystalline parameters such that epitaxial growth of the useful layer (16) on the seed layer (2) is produced with a concentration of dislocations in the useful layer (16) less than 10 power 7 per square cm. At least one bonding layer (10, 11) can be interposed between the seed layer (2) and the support (12). The seed layer (2) is removed from a source substrate (6) at a pre-breaking region (8) produced by implanting atomic species in the source substrate (6) to a depth corresponding to the thickness of the source substrate (6). Dissociation of the seed layer (2) and the source substrate (6) is produced by thermal treatment, mechanical stress and/or chemical attack.
Inventors:
Fabrice, L'Etour
Gislan, Bruno
Gislan, Bruno
Application Number:
JP2002544758A
Publication Date:
June 10, 2004
Filing Date:
November 26, 2001
Export Citation:
Assignee:
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
International Classes:
C30B25/02; C30B25/18; H01L21/04; H01L21/762; H01L33/48; (IPC1-7): H01L33/00
Domestic Patent References:
| JPH05211128A | 1993-08-20 | |||
| JP2000101139A | 2000-04-07 | |||
| JPH10135500A | 1998-05-22 | |||
| JP2000261088A | 2000-09-22 |
Foreign References:
| WO1999039371A2 | 1999-08-05 |
Attorney, Agent or Firm:
Keiichi Ota