Title:
How to program memory systems and non-volatile memory devices
Document Type and Number:
Japanese Patent JP6306359
Kind Code:
B2
Abstract:
A memory system includes a nonvolatile memory device, and a memory controller configured to control the nonvolatile memory device such that memory cells connected with a selected row of the nonvolatile memory device are programmed by one of a first program mode and a second program mode. At the first program mode, a plurality of logical pages corresponding in number to a maximum page number is stored at the memory cells, and at the second program mode, one or more logical pages the number of which is less than the maximum page number are stored at the memory cells using a bias condition that is different from that used in the first program mode.
More Like This:
WO/2018/187012 | OPERATION OF MIXED MODE BLOCKS |
WO/1996/029704 | EEPROM ARRAY WITH FLASH-LIKE CORE |
JP2019050071 | SEMICONDUCTOR STORAGE DEVICE AND MEMORY SYSTEM |
Inventors:
Guo Dong
Park
Park
Application Number:
JP2014019442A
Publication Date:
April 04, 2018
Filing Date:
February 04, 2014
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
G11C16/10; G11C11/56
Domestic Patent References:
JP200948758A | ||||
JP2005108303A | ||||
JP20016374A | ||||
JP10106276A |
Attorney, Agent or Firm:
Kyosei International Patent Office