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Title:
A recovery method and a recycling method of ammonia and hydrogen
Document Type and Number:
Japanese Patent JP6101958
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for efficiently recovering and reusing both ammonia and hydrogen from exhaust gas containing ammonia, hydrogen and nitrogen, discharged from a manufacturing process of a gallium nitride-based compound semiconductor.SOLUTION: Exhaust gas containing ammonia, hydrogen and nitrogen, discharged from a manufacturing process of a gallium nitride-based compound semiconductor, is subjected to pressure treatment and cooling by means of a heat pump, and the ammonia contained in the exhaust gas is liquefied and recovered by separating hydrogen and nitrogen. Furthermore, the nitrogen contained in the exhaust gas after ammonia removal processing is liquefied, and the hydrogen is separated and recovered. The ammonia and hydrogen thus recovered are supplied to the manufacturing process of a gallium nitride-based compound semiconductor.

Inventors:
Hiromasa Izaki
Masanori Iwaki
Toshio Akiyama
Application Number:
JP2013025081A
Publication Date:
March 29, 2017
Filing Date:
February 13, 2013
Export Citation:
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Assignee:
Japan Pionics Co., Ltd.
International Classes:
H01L21/205; B01D53/22; B01D71/02; C23C16/44; F25J1/00; F25J3/06
Domestic Patent References:
JP2007019052A
JP6157027A
JP2012106146A
JP2005060225A
JP2005536336A
JP2008007378A
JP2000317246A
JP5330802A
JP2012106210A
JP1145303A
JP2008013406A
JP2011207672A
Attorney, Agent or Firm:
Tamotsu Otani