Title:
四フッ化ケイ素の精製方法
Document Type and Number:
Japanese Patent JP5654872
Kind Code:
B2
Abstract:
Processes for purifying silicon tetrafluoride source gas by subjecting the source gas to one or more purification processes including: contacting the silicon tetrafluoride source gas with an ion exchange resin to remove acidic contaminants, contacting the silicon tetrafluoride source gas with a catalyst to remove carbon monoxide, by removal of carbon dioxide by use of an absorption liquid, and by removal of inert compounds by cryogenic distillation; catalysts suitable for removal of carbon monoxide from silicon tetrafluoride source gas and processes for producing such catalysts.
Inventors:
ビタル・レバンカル
ジャミール・イブラヒム
ジャミール・イブラヒム
Application Number:
JP2010525895A
Publication Date:
January 14, 2015
Filing Date:
September 11, 2008
Export Citation:
Assignee:
エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッドＭＥＭＣ ＥＬＥＣＴＲＯＮＩＣ ＭＡＴＥＲＩＡＬＳ，ＩＮＣＯＲＰＯＲＡＴＥＤ
International Classes:
C01B33/107; B01J23/72; B01J23/94; B01J32/00; B01J35/10; B01J37/02; B01J37/03; B01J37/08; B01J38/02
Attorney, Agent or Firm:
Mutsumi Sameshima
Yasuo Tamura
On a word Keiichi
Yasuo Tamura
On a word Keiichi