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Title:
EUVリソグラフィ用反射型半導体マスク及びその製法ならびに当該半導体マスクを用いるフォトレジストのパターニング方法
Document Type and Number:
Japanese Patent JP4589918
Kind Code:
B2
Abstract:
A patterned reflective semiconductor mask uses a multiple layer ARC overlying an absorber stack that overlies a reflective substrate. The absorber stack has more than one layer and an upper layer of the absorber stack has a predetermined metal. The multiple layer ARC overlying the upper layer of the absorber stack has layers of nitrogen, oxygen and nitrogen combined with the predetermined metal of the upper layer of the absorber stack. The oxygen layer in the ARC has less metallic properties than the nitrogen layers therein. In one form, an overlying dielectric layer is positioned on the multiple layer ARC to increase light interference. The ARC provides wide bandwidth inspection contrast for extreme ultra-violet (EUV) reticles.

Inventors:
Wasson, James Earl.
Mangato, Pawitter
Application Number:
JP2006508740A
Publication Date:
December 01, 2010
Filing Date:
February 13, 2004
Export Citation:
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Assignee:
Freescale Semiconductor, Inc.
International Classes:
H01L21/027; G03C5/00; G03F1/24; G03F1/54; G03F9/00; G06K9/00; G21K5/00; G03F1/00; H01L
Domestic Patent References:
JP1175736A
JP4246649A
JP2001242630A
Foreign References:
US6479195
Attorney, Agent or Firm:
Mamoru Kuwagaki