Title:
METHOD FOR REMOVING METAL LAYER
Document Type and Number:
Japanese Patent JP2017201650
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To confirm whether or not crystal defects occur in a semiconductor substrate with a metal layer formed thereon while the semiconductor substrate is in the state where whether or not crystal defects occur can be confirmed, in a method for removing the metal layer.SOLUTION: In a method for removing a metal layer W2, the metal layer W2 formed on an upper surface W1a of a semiconductor substrate W1 is removed. The method includes: a holding step of holding a lower surface W1b of the semiconductor substrate W1a by a holding means 30; and a byte removing step of lathe turning the metal layer W2 by a lathe turning means 7 to remove the metal layer W2, the lathe turning means orbiting a byte 751 around a rotating shaft 70 as an axis to be lathe turned.SELECTED DRAWING: Figure 2
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Inventors:
KOIKE KAZUHIRO
OMOMOTO MASABUMI
OMOMOTO MASABUMI
Application Number:
JP2016092405A
Publication Date:
November 09, 2017
Filing Date:
May 02, 2016
Export Citation:
Assignee:
DISCO ABRASIVE SYSTEMS LTD
International Classes:
H01L21/304; B23B3/22; B23B27/00; B23D5/02
Domestic Patent References:
| JP2011211012A | 2011-10-20 | |||
| JP2016041459A | 2016-03-31 | |||
| JP2011109067A | 2011-06-02 |
Attorney, Agent or Firm:
Patent Business Corporation Tokyo Alpa Patent Office
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