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Title:
REMOVAL METHOD OF PRECIOUS METAL-CONTAINING HETEROGENEOUS METAL MULTILAYERED FILM
Document Type and Number:
Japanese Patent JP2018104736
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a removal method of an attachment of semiconductor production device parts, which can remove a multilayered film (attachment) where metal containing a plurality of kinds of precious metals attached to parts of a semiconductor production device are laminated in several tens of layers and which does not generate damage of a host material.SOLUTION: A removal method of precious metal-containing heterogeneous metal multilayered film includes a step of removing the precious metal-containing heterogeneous metal multilayered film attached to the semiconductor production device parts by wet etching, while dipping the semiconductor production device parts to which the precious metal-containing heterogeneous metal multilayered film containing a layer of a plurality of precious metals or precious metal alloys are adhered in an etching liquid that dissolves the precious metal, and also irradiating ultrasonic.SELECTED DRAWING: Figure 2

Inventors:
TAGUCHI SHINYA
SHIRAHAMA TOSHIKI
MOROOKA MASAKAZU
Application Number:
JP2016249726A
Publication Date:
July 05, 2018
Filing Date:
December 22, 2016
Export Citation:
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Assignee:
SHINRYO CORP
International Classes:
C22B7/00; C22B3/04; C22B11/00
Attorney, Agent or Firm:
Hisashi Kato
Takashi Kuboyama
Keita Tohsaka
Hiroshi Mori
Toru Minase