Title:
レジスト組成物及びレジストパターン形成方法
Document Type and Number:
Japanese Patent JP5933364
Kind Code:
B2
Abstract:
There are provided a method of forming a resist pattern includes: a step (1) in which a resist composition containing a base component (A) that generates base upon exposure and exhibits increased solubility in an alkali developing solution by the action of acid is applied to a substrate to form a resist film; a step (2) in which the resist film 2 is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film 2 is subjected to an alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion 2b of the resist film 2 has been dissolved and removed, and the resist composition used in the step (1).
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Inventors:
Hiroaki Shimizu
Takeshi Nakamura
Yokotani Jiro
Hitoshi Nito
Takeshi Nakamura
Yokotani Jiro
Hitoshi Nito
Application Number:
JP2012140216A
Publication Date:
June 08, 2016
Filing Date:
June 21, 2012
Export Citation:
Assignee:
Tokyo Ohka Kogyo Co., Ltd.
International Classes:
G03F7/038; C08F212/14; C08F220/36; C08F226/02; G03F7/004; G03F7/039
Domestic Patent References:
| JP7261393A | ||||
| JP2011102974A | ||||
| JP2012018197A | ||||
| JP2012018198A | ||||
| JP2012181510A |
Foreign References:
| US20030008240 | ||||
| US20020187436 | ||||
| US20020160318 | ||||
| US20020160316 |
Attorney, Agent or Firm:
Sumio Tanai
Masatake Shiga
Suzuki Mitsuyoshi
Mitsunaga Igarashi
Masatake Shiga
Suzuki Mitsuyoshi
Mitsunaga Igarashi