第二アミノ基を有するノボラックポリマーを含むレジスト下層膜形成組成物

Title:

第二アミノ基を有するノボラックポリマーを含むレジスト下層膜形成組成物

Document Type and Number:

Japanese Patent JP6583630

Kind Code:

B2

Abstract:

A resist underlayer film which has an excellent hard mask function and can form an excellent pattern shape. A resist underlayer film-forming composition to be used for a lithography process, including a novolac polymer obtained by reaction of an aldehyde compound and an aromatic compound having a secondary amino group. The novolac polymer contains a unit structure of Formula (1):A method for producing a semiconductor device, including the steps of: forming a resist underlayer film from the resist underlayer film-forming composition on a semiconductor substrate; forming a hard mask on the resist underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask by using the formed resist pattern; etching the resist underlayer film by using the patterned hard mask; and processing the semiconductor substrate by using the patterned underlayer film.

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Inventors:

Nishimaki Hirokazu
Keisuke Hashimoto
Rikimaru Sakamoto
Takafumi Endo

Application Number:

JP2015554753A

Publication Date:

October 02, 2019

Filing Date:

December 15, 2014

Export Citation:

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