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Title:
ピノールノボラック樹脂を含むレジスト下層膜形成組成物
Document Type and Number:
Japanese Patent JP6734569
Kind Code:
B2
Abstract:
An excellent resist underlayer film having a selectivity of dry etching rate close to that of a resist, selectivity of dry etching rate lower than that of a resist, or selectivity of dry etching rate lower than that of semiconductor substrate. Resist underlayer film-forming composition including a polymer containing unit structure of Formula (1): (where R3 is hydrogen atom, or C6-40 aryl group or heterocyclic group optionally substituted with halogen group, nitro group, amino group, carbonyl group, C6-40 aryl group, or hydroxy group; R4 is a hydrogen atom, or C1-10 alkyl group, C6-40 aryl group, or heterocyclic group optionally substituted with halogen group, nitro group, amino group, or hydroxy group; R3 and R4 optionally form ring together with carbon atoms bonded thereto; and n is an integer of 0 to 2).

Inventors:
Tetsuya Shinshiro
Someya Yasunobu
Ryo Ezawa
Nishimaki Hirokazu
Takafumi Endo
Keisuke Hashimoto
Application Number:
JP2018098010A
Publication Date:
August 05, 2020
Filing Date:
May 22, 2018
Export Citation:
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Assignee:
Nissan Chemical Co., Ltd.
International Classes:
C08G12/26; G03F7/11; H01L21/027
Domestic Patent References:
JP2001354674A
JP2004099522A
JP63125512A
JP2013053215A
Foreign References:
EP1505095A1
WO2014208499A1
Attorney, Agent or Firm:
Hanabusa Patent and Trademark Office